SiHFIBC40G mosfet equivalent, power mosfet.
600 1.2
Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
* Dynamic dV/dt Rating .
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and externa.
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